As a world leading player in fabrication of SOI materials, Simgui adopts 4 methods to provide a wide range of SOI products.

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    1. SIMOX

            SIMOX, which stands for Separation by Implantation of Oxygen, is a process that Simgui uses to create an insulating layer between the layers of a bulk silicon wafer. There are two essential stages of the process: ion implantation and annealing.
            In the implantation stage, oxygen ions are implanted in the silicon wafer and react with the silicon to form silicon dioxide precipitates. However, the implantation causes considerable damage to the wafer and the layer of silicon dioxide precipitates is not continuous. Thus high-temperature annealing helps repair the damage and form the oxide precipitates into a continuous layer. Now the silicon's quality is restored and the buried oxide (BOX) layer can act as a highly effective insulator.

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    2. Bonding

            By using bonding chemistry between silicon (Si) and silicon dioxide(SiO2) or between SiO2 and SiO2 effectively, two Si wafers are tightly bonded with a SiO2 layer as an insulator inside the bonded pair. After one side of the Si bulk is thinned down properly with a desired active Si layer thickness, bonded SOI wafers are obtained.
            The fabrication process is accomplished by three basic steps. The first step is to mate a thermally oxidized wafer on a non-oxidized wafer at room temperature. The second step is to anneal the bonded pair to increase bonding strength. The third step is to thin down one side of the bonded pair to an appropriate thickness by grinding, etching and polishing.

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    3. Simbond

            Derived from conventional wafer bonding and ion-implantation technologies comes another method called Simbond that Simgui originates in preparation of SOI materials.
            The ion-implantation provides a well distributed ion-implanted layer. This layer serves as a chemical etch stop layer, which allows for an excellent uniformity control on the thickness of the device layer before a final polish process. The innovated process can produce high quality SOI wafer with superior SOI uniformity and thick BOX layer.

    4. Smart-cut ? Technology

    Smart Cut ? technology is the world leader in fabrication of SOI materials. The fabrication process is accomplished by five basic steps.
    1. Thermal oxidation.
    2. Hydrogen Implantation.
    3. Cleaning&Boning.
    4. Splitting.
    5. Annealing& CMP touch polishing.



    Simgui gains the strength from its US-based parter, More Technologies,the acknowledged specialist in epitaxial technology. Simgui is benefiting from close collaboration with such leading substrate suppliers at home and abroad as Forrotec, Gritek and etc. Combing the effective, stable supply channels and its powerful, flexible processing ablility, Simgui has distinguished itself among its domestic and oversea competitors.
    Address: 200 Xinlai Road, Jiading District Shanghai 201815, PRC Tel: +86-21-6952 2599 Fax: +86-21-6952 2221